Session series »Powering the Future – Innovative Technologies for Power Electronics Modules with SiC and GaN Semiconductors«
A game changer material for power electronics
Technologies and systems based on wide-bandgap (WBG) semiconductors have been the focus of R&D activities and production scaling for several years now. The production and therefore the use of these semiconductor materials is significantly more complex and costly compared to the established silicon technology, but due to their outstanding properties and the associated possibilities in a variety of applications, WBG semiconductors are increasingly becoming an attractive alternative to Si semiconductors. Silicon carbide (SiC) and gallium nitride (GaN) are currently the mainly relevant WBG semiconductor materials and are innovation drivers for e.g. power electronics in sensors & enable new solutions, especially for electromobility and renewable energies.
Innovative approaches for new possibilities
In order to fully exploit the advantages of power semiconductors based on silicon carbide (SiC) and gallium nitride (GaN), new approaches and technologies are required in assembly and connection technology that do justice to the new possibilities and operation scenarios.
Expertise for future-oriented developments
The researchers at Fraunhofer IZM now have many years of experience in this field, both in technology development at wafer level, in the processing of embedding PCB technology and in the construction and customer-specific development of power electronic modules with power semiconductors based on silicon carbide (SiC), gallium nitride (GaN).
What to expect from the Experts Sessions
In the sessions, the experts will give you a sound insight into the latest approaches and technologies, demonstrate application scenarios and address challenges and opportunities in the customer-specific development of power electronic modules.
- 30.1.2024: Novel Concepts for fast switching power converters, Prof. Eckart Hoene
- 13.2.2024: Wafer-level process technologies for SiC/GaN power electronics, Dr. Piotr Mackowiak
- 27.2.2024: Highly reliable Interconnect Processes for Power Electronics, Dr. Matthias Hutter
- 12.3.2024 Novel Integration Concepts for Power Electronics – PCB Embedding for Sic and GaN Semiconductors, Lars Böttcher
- 26.3.2024 Reliability Challenges of Power Electronic Modules, Dr. Stefan Wagner
Online-Sessions / January 30, 2024 – March 26, 2024, 16:00 – 16:45 CET