Semiconductor technologies for energy-efficient gallium nitride electronics
News / 19 May 2026
Gallium nitride plays a key role in greener electronics
A significant reduction in energy consumption and CO₂ emissions through modular and easy-to-integrate GaN power semiconductors – this is the objective of the EU-funded All2GaN project. Forty-five partners from twelve countries are collaborating to unlock the energy-saving potential of gallium nitride (GaN) semiconductors for a broad range of industrial applications. Fraunhofer IZM plays a key role across the value chain: leveraging its internationally recognized expertise in packaging technologies, the institute is developing innovative assembly solutions that are essential for the performance, miniaturization, and sustainability of next-generation GaN electronics.
Gallium nitride is regarded as one of the most promising semiconductor materials for future electronic systems. Compared to silicon, GaN enables higher power densities, lower switching losses, and higher operating frequencies – providing decisive advantages for applications in telecommunications, data centers, e-mobility, renewable energy, and smart grid technologies.
The components developed within the All2GaN project (“Affordable smart GaN IC solutions for greener applications”) are being evaluated in eleven industrial use-case demonstrators to systematically assess their efficiency potential. Across all use cases, the researchers expect to achieve an average reduction in power losses of around 30 percent. In addition, the project aims to establish an integration toolbox that will pave the way for a new generation of modular, easy-to-integrate GaN power semiconductors.
The development of suitable interconnection technologies for printed circuit boards is essential to fully exploit the advantages of gallium nitride in real-world applications. While other project partners are investigating conventional soldering approaches and sintering technologies, the scientists at Fraunhofer IZM are focusing on thermocompression – a process particularly well suited for fine-pitch applications with dimensions below 10 µm.
The All2GaN project runs from May 1, 2023, to October 30, 2026, and is funded with a total budget of €60 million under the Chips Joint Undertaking (Grant Agreement No. 101111890). This includes €4.81 million provided by the German Federal Ministry of Research, Technology and Space (BMFTR) and €40,000 from the Free State of Thuringia.